Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices

Figure 2

(a) TEM morphology along the cross section of sample #2 (). (b) Strain curves along the channel direction for samples with varying GeH₄ flow rates. (c) Strain curves along the channel direction for samples with varying B₂H₆ flow rate.

(a)

(b)

(c)