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Journal of Nanomaterials
Volume 2015, Article ID 672305, 11 pages
http://dx.doi.org/10.1155/2015/672305
Research Article

Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany
2Department for Sample Environment, Helmholtz-Zentrum Berlin, 14109 Berlin, Germany
3Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
4Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
5Nanostructured Materials, Humboldt-Universität zu Berlin, 10099 Berlin, Germany

Received 19 December 2014; Accepted 16 April 2015

Academic Editor: Yu Deng

Copyright © 2015 Stefan Weidemann et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Stefan Weidemann, Maximilian Kockert, Dirk Wallacher, et al., “Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms,” Journal of Nanomaterials, vol. 2015, Article ID 672305, 11 pages, 2015. https://doi.org/10.1155/2015/672305.