Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

Table 1

Gas adsorption data for nanowire ensembles prepared from highly boron-doped silicon ( < 0.01 Ωcm). For comparison undoped nanowire ensemble ( > 1000 Ωcm, (H₂O₂) = 0.5 M, etching time = 185 min, wire length = 111.1 µm) reveals a MBET surface area of 0.113 m². Nanowire ensemble of medium boron-doped silicon ( = 14–23 Ωcm, (H₂O₂) = 0.4 M, etching time = 199 min, wire length = 101.6 µm) reveals a MBET surface area of 0.212 m².

(H2O2)	etching time [min]	Wire length [µm]	BET surface area [m^2]	BJH total pore volume [10^−3 cm^3]	BJH mean pore diameter [nm]
0.1 M	60	26.7	0.581	1.64	8.5
0.1 M	122	37.3	0.701	2.22	9.9
0.1 M	180	30.1	0.622	1.99	13.1
0.2 M	65	18.8	0.467	1.58	10.5
0.2 M	122	31.1	0.524	1.97	9.9
0.2 M	180	38.5	1.082	2.81	8.9