Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 4

The values of drain current of FinFET and MOSFET transistors.

Number of transistors in series	MOSFET		FinFET
	Width (nm)	Current (nA)	TFIN (nm)	HFIN (nm)	NFIN	Current (nA)
n-type
1	16.00	61.49	10.00	10.00	1	65.79
2	32.00	97.08	10.00	10.00	2	131.57
3	48.00	166.23	10.00	10.00	3	197.36
4	64.00	235.19	10.00	10.00	4	263.14
8	128.00	510.75	10.00	10.00	8	526.29
10	160.00	648.18	10.00	10.00	10	657.86
p-type
2	32.00	47.37	17.00	17.00	2	63.32
4	64.00	116.38	17.00	17.00	4	126.64
5	80.00	150.86	17.00	17.00	5	158.30
6	96.00	185.33	17.00	17.00	6	190.00
8	128.00	254.26	17.00	17.00	8	253.30
8/3	42.66	70.377	17.00	19.00	2	70.77
9	144.00	288.73	17.00	17.00	9	283.90
12	192.00	392.11	17.00	17.00	12	379.90