Journal of Nanomaterials / 2015 / Article / Tab 6

Research Article

Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 6

Average power dissipation of MOSFET and FinFET full adder.

Full adder Average power dissipation (W)
MOSFETFinFET

CMOS2.30 × 10−98.41 × 10−10
HCMOS1.40 × 10−93.17 × 10−10
CPL1.69 × 10−95.23 × 10−10
TG1.74 × 10−97.41 × 10−10

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