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Journal of Nanomaterials
Volume 2015, Article ID 782786, 6 pages
Research Article

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Department of Electronic Engineering, National United University, No. 1 Lienda, Miaoli 36003, Taiwan

Received 1 September 2015; Accepted 23 November 2015

Academic Editor: Christian Brosseau

Copyright © 2015 Yu-Hsien Lin and Jay-Chi Chou. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (<300°C) and compared them with low temperature silicon dioxide (SiO2). The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.