Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Table 2

Gate-insulating layer and heat formation in IGZO compounds.

	Gate-insulating layer			IGZO
Heat of formation	Si3N4	SiO2	Al2O3	In2O3	Ga2O3	ZnO
(kJ/mol)	−743.5	−910.7	−1675.7	−925	−1089.1	−350.5