Recent Progress in Ohmic/Schottky-Contacted ZnO Nanowire Sensors

Figure 7

(a) Schematic of a ZnO NW UV sensor structure with ohmic-contacted. (b) Schematic of a ZnO NW UV sensor structure with ohmic-contact, when illuminated by 30 μW/cm² UV source (365 nm). The inset shows the corresponding I-V characteristics in dark and under UV illumination. (c) Photon-response spectrum of the ZnO NW UV sensor as a function of wavelength of incident light. Upper inset is an optical image of Schottky-contacted UV sensor. Lower inset shows the schematic structure of the device. (d) I-V characteristics of a sensor both in the dark (black cycle) and under 365 nm UV illumination (red rectangle). (e) Time dependence of the photocurrent growth and decay under periodic illumination of the 365 nm UV light on the device. The bias on the device is 1 V. (f) Experimental curve (black) and fitted curve (red) of the photocurrent decay process [59]. Copyright 2009, AIP Publishing LLC.

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