Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near-Field Optical Microscope

Figure 5

(a) 3D version of ShFM image of the line nanopatterns with different number of pattern exposures. The numbers of iterations change from 0 to 4. “0 times” means that the line was produced at a constant laser power with scan speed of 10 μm/s. Topographical changes of the photoresist surface were detected before development stage. (b) Plots of the average width and depth of patterns in terms of the number of iterations of pattern exposure before development of photoresist.

(a)

(b)