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Journal of Nanomaterials
Volume 2015, Article ID 937310, 9 pages
http://dx.doi.org/10.1155/2015/937310
Research Article

Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

1College of Science, Hebei United University, Tangshan 063000, China
2College of Light Industry, Hebei United University, Tangshan 063000, China

Received 6 January 2015; Accepted 17 March 2015

Academic Editor: J. David Carey

Copyright © 2015 Guangxin Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Guangxin Wang, Xiuzhi Duan, and Wei Chen, “Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots,” Journal of Nanomaterials, vol. 2015, Article ID 937310, 9 pages, 2015. https://doi.org/10.1155/2015/937310.