Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Figure 3

The built-in electric field () in the well (barrier) layer along the QD growth direction as a function of the barrier thickness in WZ GaN/Al_xGa_1−xN strained QD with the QD thickness  nm, for different Al compositions .