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Journal of Nanomaterials
Volume 2015, Article ID 937310, 9 pages
http://dx.doi.org/10.1155/2015/937310
Research Article

Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

1College of Science, Hebei United University, Tangshan 063000, China
2College of Light Industry, Hebei United University, Tangshan 063000, China

Received 6 January 2015; Accepted 17 March 2015

Academic Editor: J. David Carey

Copyright © 2015 Guangxin Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. M. Gladysiewicz, R. Kudrawiec, J. Misiewicz et al., “The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures,” Applied Physics Letters, vol. 98, no. 1, Article ID 231902, 2011. View at Publisher · View at Google Scholar · View at Scopus
  2. L. Duggen and M. Willatzen, “Crystal orientation effects on wurtzite quantum well electromechanical fields,” Physical Review B&Condensed Matter and Materials Physics, vol. 82, no. 20, Article ID 205303, 2010. View at Publisher · View at Google Scholar · View at Scopus
  3. A. Armstrong, A. A. Allerman, T. A. Henry, and M. H. Crawford, “Influence of growth temperature on AlGaN multiquantum well point defect incorporation and photoluminescence efficiency,” Applied Physics Letters, vol. 98, no. 16, Article ID 162110, 2011. View at Publisher · View at Google Scholar · View at Scopus
  4. M. Zhang and S. L. Ban, “Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1−xN heterojunction,” Chinese Physics B, vol. 18, no. 10, pp. 4449–4455, 2009. View at Publisher · View at Google Scholar · View at Scopus
  5. M. Pattammal and A. J. Peter, “Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well,” Applied Surface Science, vol. 256, no. 22, pp. 6748–6752, 2010. View at Publisher · View at Google Scholar · View at Scopus
  6. C. X. Xia, Z. P. Zeng, S. Y. Wei, and J. B. Wei, “Shallow-donor impurity in vertical-stacked InGaN/GaN multiple-quantum wells: electric field effect,” Physica E, vol. 43, no. 1, pp. 458–461, 2010. View at Publisher · View at Google Scholar · View at Scopus
  7. Z. Y. Feng, S. L. Ban, and J. Zhu, “Binding energies of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions with finitely thick potential barriers,” Chinese Physics B, vol. 23, no. 6, Article ID 066801, 2014. View at Publisher · View at Google Scholar
  8. Y. N. Wei, Y. Ji, Q. Sun, C. X. Xia, and Y. Jia, “Barrier width and built-in electric field effects on hydrogenic impurity in wurtzite GaN/AlGaN quantum well,” Physica E: Low-Dimensional Systems and Nanostructures, vol. 44, no. 2, pp. 511–514, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. H. ElGhazi, A. Jorio, and I. Zorkani, “Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs,” Physica B: Condensed Matter, vol. 410, no. 1, pp. 49–52, 2013. View at Publisher · View at Google Scholar · View at Scopus
  10. P. Baser, S. Elagoz, and N. Baraz, “Hydrogenic impurity states in zinc-blende InxGa1-xN/GaN in cylindrical quantum well wires under hydrostatic pressure,” Physica E: Low-Dimensional Systems and Nanostructures, vol. 44, no. 2, pp. 356–360, 2011. View at Publisher · View at Google Scholar · View at Scopus
  11. M. Zhang and J.-J. Shi, “Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures,” Superlattices and Microstructures, vol. 50, no. 5, pp. 529–538, 2011. View at Publisher · View at Google Scholar · View at Scopus
  12. M. Kırak, S. Yılmaz, M. Şahin, and M. Gençaslan, “The electric field effects on the binding energies and the nonlinear optical properties of a donor impurity in a spherical quantum dot,” Journal of Applied Physics, vol. 109, no. 9, Article ID 094309, 2011. View at Publisher · View at Google Scholar
  13. M. Zhang and J. J. Shi, “Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch,” Journal of Applied Physics, vol. 111, no. 11, Article ID 113516, 6 pages, 2012. View at Publisher · View at Google Scholar · View at Scopus
  14. D. M. Zheng, Z. C. Wang, and B. Q. Xiao, “Effects of hydrostatic pressure on ionized donor bound exciton states in strained wurtzite GaN/AlxGa1−xN cylindrical quantum dots,” Physica B: Condensed Matter, vol. 407, no. 21, pp. 4160–4167, 2012. View at Publisher · View at Google Scholar · View at Scopus
  15. M. G. Barseghyan, A. A. Kirakosyan, and C. A. Duque, “Hydrostatic pressure,electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga1-xAlxAs quantum dots,” Physica Status Solidi (B) Basic Research, vol. 246, no. 3, pp. 626–629, 2009. View at Publisher · View at Google Scholar · View at Scopus
  16. C. X. Xia, Z. P. Zeng, and S. Y. Wei, “Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot,” Journal of Applied Physics, vol. 106, no. 9, Article ID 094301, 2009. View at Publisher · View at Google Scholar · View at Scopus
  17. C. X. Xia, S. Y. Wei, and X. Zhao, “Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot,” Applied Surface Science, vol. 253, no. 12, pp. 5345–5348, 2007. View at Publisher · View at Google Scholar · View at Scopus
  18. J.-M. Wagner and F. Bechstedt, “Pressure dependence of the dielectric and lattice-dynamical properties of GaN and AlN,” Physical Review B—Condensed Matter and Materials Physics, vol. 62, no. 7, pp. 4526–4534, 2000. View at Publisher · View at Google Scholar · View at Scopus
  19. J. A. Tuchman and I. P. Herman, “General trends in changing epilayer strains through the application of hydrostatic pressure,” Physical Review B, vol. 45, no. 20, pp. 11929–11935, 1992. View at Publisher · View at Google Scholar · View at Scopus
  20. P. Perlin, L. Mattos, N. A. Shapiro et al., “Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate,” Journal of Applied Physics, vol. 85, no. 4, pp. 2385–2389, 1999. View at Publisher · View at Google Scholar · View at Scopus
  21. S. P. Łepkowski, “Nonlinear elasticity effect in group III-nitride quantum heterostructures: Ab initio calculations,” Physical Review B, vol. 75, no. 19, Article ID 195303, 11 pages, 2007. View at Publisher · View at Google Scholar · View at Scopus
  22. W. Shan, R. J. Hauenstein, A. J. Fischer et al., “Strain effects on excitonic transitions in GaN: deformation potentials,” Physical Review B—Condensed Matter and Materials Physics, vol. 54, no. 19, pp. 13460–13463, 1996. View at Publisher · View at Google Scholar · View at Scopus
  23. N. E. Christensen and I. Gorczyca, “Optical and structural properties of III-V nitrides under pressure,” Physical Review B, vol. 50, no. 7, pp. 4397–4415, 1994. View at Publisher · View at Google Scholar · View at Scopus
  24. M. Holtz, M. Seon, O. Brafman, R. Manor, and D. Fekete, “Pressure dependence of the optic phonon energies in AlxGa1-xAs,” Physical Review B—Condensed Matter and Materials Physics, vol. 54, no. 3, pp. 8714–8720, 1996. View at Publisher · View at Google Scholar · View at Scopus
  25. S. P. Łepkowski, “Nonlinear elasticity effect in group III-nitride quantum heterostructures: Ab initio calculations,” Physical Review B—Condensed Matter and Materials Physics, vol. 75, no. 19, Article ID 195303, 11 pages, 2007. View at Publisher · View at Google Scholar · View at Scopus
  26. J. M. Wagner and F. Bechstedt, “Properties of strained wurtzite GaN and AlN: Ab initio studies,” Physical Review B—Condensed Matter and Materials Physics, vol. 66, no. 11, 20 pages, 2002. View at Publisher · View at Google Scholar · View at Scopus
  27. S. H. Ha and S. L. Ban, “Binding energies of excitons in a strained wurtzite GaN/AlGaN quantum well influenced by screening and hydrostatic pressure,” Journal of Physics: Condensed Matter, vol. 20, no. 8, Article ID 085218, 2008. View at Publisher · View at Google Scholar · View at Scopus
  28. S. P. Łepkowski, J. A. Majewski, and G. Jurczak, “Nonlinear elasticity in III-N compounds: ab initio calculations,” Physical Review B—Condensed Matter and Materials Physics, vol. 72, no. 24, Article ID 245201, 12 pages, 2005. View at Publisher · View at Google Scholar · View at Scopus
  29. N. E. Christensen and I. Gorczyca, “Optical and structural properties of III-V nitrides under pressure,” Physical Review B, vol. 50, no. 7, pp. 4397–4404, 1994. View at Publisher · View at Google Scholar · View at Scopus