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Journal of Nanomaterials
Volume 2015, Article ID 969783, 7 pages
http://dx.doi.org/10.1155/2015/969783
Research Article

Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

1Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
2The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan

Received 2 March 2015; Accepted 14 June 2015

Academic Editor: Tapan Desai

Copyright © 2015 Tai-Hsiang Lui et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Cu2Sn3S7 (CTS) can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS) process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.