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Journal of Nanomaterials
Volume 2016, Article ID 1367095, 6 pages
http://dx.doi.org/10.1155/2016/1367095
Research Article

Enhanced Response Speed of ZnO Nanowire Photodetector by Coating with Photoresist

1MEMS Lab., Department of Precision Instruments, Tsinghua University, Beijing 100084, China
2State Key Lab. of Precision Measurement Technology and Instrumentation, Tsinghua University, Beijing 100084, China
3School of Electronic Information and Automation, Tianjin University of Science and Technology, Tianjin 300222, China
4Institute of Medical Equipment, Academy of Military Medical Sciences, Tianjin 300161, China
5Key Laboratory of Advanced Reactor Engineering and Safety of Ministry of Education, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Institute of Nuclear and New Energy Technology of Tsinghua University, Beijing 100084, China

Received 23 May 2016; Accepted 27 July 2016

Academic Editor: Ali Khorsand Zak

Copyright © 2016 Xing Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Spin-coating photoresist film on ZnO nanowire (NW) was introduced into the fabrication procedure to improve photoresponse and recovery speed of a ZnO NW ultraviolet photoelectric detector. A ZnO NW was first assembled on prefabricated electrodes by dielectrophoresis. Then, photoresist was spin-coated on the nanowire. Finally, a metal layer was electrodeposited on the nanowire-electrode contacts. The response properties and I-V characteristics of ZnO NW photodetector were investigated by measuring the electrical current under different conditions. Measurement results demonstrated that the detector has an enhanced photoresponse and recovery speed after coating the nanowire with photoresist. The photoresponse and recovery characteristics of detectors with and without spin-coating were compared to demonstrate the effects of photoresist and the enhancement of response and recovery speed of the photodetector is ascribed to the reduced surface absorbed oxygen molecules and binding effect on the residual oxygen molecules after photoresist spin-coating. The results demonstrated that surface coating may be an effective and simple way to improve the response speed of the photoelectric device.