Two-Dimensional Electron Gas at SrTiO₃-Based Oxide Heterostructures via Atomic Layer Deposition

Figure 6

Epitaxial growth of γ-Al₂O₃ on TiO₂-terminated STO substrate via ALD at (a) 2.1 nm thick Al₂O₃ at 345°C, (b) 2.5 nm thick Al₂O₃ at 300°C, (c) 27 nm thick Al₂O₃ at 345°C, and (d) selective area electron diffraction of 27 nm thick Al₂O₃ at 345°C (reproduced from [58] with permission).

(a)

(b)

(c)

(d)