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Journal of Nanomaterials
Volume 2016, Article ID 2131940, 6 pages
Research Article

Magnetic and Electrical Properties of Heusler Alloy Co2MnSi Thin Films Grown on Ge(001) Substrates via an Al2O3 Tunnel Barrier

School of Electronics and Information, Northwestern Polytechnical University, 127 West Youyi Road, Xi’an, Shaanxi 710072, China

Received 4 September 2015; Revised 27 November 2015; Accepted 10 December 2015

Academic Editor: Oscar Perales-Pérez

Copyright © 2016 Gui-fang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Heusler alloy Co2MnSi/Al2O3 heterostructures on single-crystal Ge(001) substrates were prepared through magnetron sputtering for both Co2MnSi and Al2O3 thin films as a promising candidate for future-generation semiconductor-based spintronic devices. Sufficiently high saturation magnetization 781 emu/cm3 was obtained for the Co2MnSi thin film. Furthermore, the current versus voltage (I-V) characteristics showed that the tunneling conduction was dominant in Co2MnSi/Al2O3 (2 nm)/Ge(001) heterostructure and the I-V characteristics were slightly dependent on temperature. The conductance versus voltage (dI/dV-V) characteristics indicated that the potential barrier height at the Co2MnSi/Al2O3 interface was almost equal to that at the n-Ge/Al2O3 interface for the prepared Co2MnSi/Al2O3/Ge(001) heterostructure.