Research Article
Magnetic and Electrical Properties of Heusler Alloy Co2MnSi Thin Films Grown on Ge(001) Substrates via an Al2O3 Tunnel Barrier
Figure 4
Typical conductance versus voltage (dI/dV-V) characteristics at 290 K for the Co2MnSi/Al2O3 (2.0 nm)/n-Ge heterostructure.