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Journal of Nanomaterials
Volume 2016, Article ID 2701028, 8 pages
http://dx.doi.org/10.1155/2016/2701028
Research Article

Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

1Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
2Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, Taiwan
3Wafer Works Corporation, Taoyuan 32542, Taiwan
4Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
5Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Received 31 March 2016; Accepted 16 June 2016

Academic Editor: Wei-Heng Shih

Copyright © 2016 Hsu-Hung Hsueh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hsu-Hung Hsueh, Sin-Liang Ou, Yu-Che Peng, Chiao-Yang Cheng, Dong-Sing Wuu, and Ray-Hua Horng, “Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes,” Journal of Nanomaterials, vol. 2016, Article ID 2701028, 8 pages, 2016. https://doi.org/10.1155/2016/2701028.