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Journal of Nanomaterials
Volume 2016, Article ID 4984230, 5 pages
http://dx.doi.org/10.1155/2016/4984230
Research Article

Effect of Strain on Thermal Conductivity of Si Thin Films

1College of Mechanical and Electrical Engineering, Northeast Forestry University, Harbin 150040, China
2The State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China

Received 1 March 2016; Revised 29 April 2016; Accepted 10 May 2016

Academic Editor: Yan Wang

Copyright © 2016 Xingli Zhang and Guoqiang Wu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Nonequilibrium molecular dynamics (NEMD) simulations are employed to gain an understanding of the effect of strain on the thermal conductivity of Si thin films. The analysis shows that the strain has an appreciable influence on the thermal conductivity of Si thin films. The thermal conductivity decreases as the tensile strain increases and increases as the compressive strain increases. The decrease of the phonon velocities and surface reconstructions generated under strain could explain well the effects of strain on the thermal conductivity of Si thin films.