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Journal of Nanomaterials
Volume 2016, Article ID 6729032, 9 pages
Research Article

XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions

Science Faculty, Physics Department, Anadolu University, 26470 Eskisehir, Turkey

Received 11 April 2016; Revised 20 May 2016; Accepted 23 May 2016

Academic Editor: Mohamed Bououdina

Copyright © 2016 Saliha Ilican et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. The p-Si/n-ZnO and p-Si/n-FZN heterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (), and series resistance () which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde’s function, and Cheung’s method. There is a good agreement between the diode parameters obtained from different methods.