XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions

Table 1

The diode parameters of the fabricated heterojunction diodes.

Diode	-		Cheung-Cheung				Norde
			Cheung		function
		(eV)	(kΩ)		(kΩ)	(eV)	(kΩ)	(eV)
D0	3.87	0.74	76.21	3.44	290.00	0.80	19.30	0.82
D1	4.05	0.73	105.98	3.85	300.07	0.70	119.00	0.77
D5	4.31	0.68	107.97	4.49	240.82	0.57	66.30	0.71
D10	3.06	0.73	81.44	3.86	149.25	0.69	96.00	0.77
D15	3.98	0.68	52.64	4.10	88.95	0.65	1.94	0.71
D35	3.96	0.72	55.81	5.50	325.67	0.46	54.10	0.73