Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

Figure 3

(a) Atomic force microscopy (AFM) image of an atomic-layer-deposited 100-cycle Al₂O₃ film on highly oriented pyrolytic graphite (HOPG) substrate without and with an Al seed layer. The scale bar is 500 nm. (b) Surface roughness (RMS) of an atomic-layer-deposited 100-cycle Al₂O₃ film on HOPG without and with 0.2 mg, 0.3 mg, and 0.4 mg Al for the seed layer thermal evaporation.

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