Journal of Nanomaterials / 2016 / Article / Fig 4

Research Article

Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

Figure 4

(a) Representative capacitance-voltage () characteristics of fabricated graphene flash memory at room temperature (RT). Inset shows characteristics of the control sample. The arrows denote the sweep directions. (b) Comparison of hysteresis of graphene flash memory cell and control sample at both RT and 250 K.
(a)
(b)