Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2016, Article ID 7825456, 11 pages
http://dx.doi.org/10.1155/2016/7825456
Research Article

The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

1Industrial University of HCMC, Ho Chi Minh City 700000, Vietnam
2Faculty of Foundation Sciences, HCMC University of Technology and Education, Ho Chi Minh City 700000, Vietnam
3Faculty of Physics and Engineering Physics, University of Sciences, VNU-HCMC, Ho Chi Minh City 700000, Vietnam
4Faculty of Material Sciences, University of Sciences, VNU-HCMC, Ho Chi Minh City 700000, Vietnam

Received 14 March 2016; Accepted 8 May 2016

Academic Editor: Zhaoyao Zhan

Copyright © 2016 Huu Phuc Dang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. V. G. Kytin, V. A. Kulbachinskii, O. V. Reukova et al., “Conducting properties of In2O3:Sn thin films at low temperatures,” Applied Physics A, vol. 114, no. 3, pp. 957–964, 2014. View at Publisher · View at Google Scholar · View at Scopus
  2. V. Musat, B. Teixeira, E. Fortunato, R. C. C. Monteiro, and P. Vilarinho, “Al-doped ZnO thin films by sol–gel method,” Surface and Coatings Technology, vol. 180-181, pp. 659–662, 2004. View at Publisher · View at Google Scholar · View at Scopus
  3. M. V. Castro and C. J. Tavares, “Dependence of Ga-doped ZnO thin film properties on different sputtering process parameters: substrate temperature, sputtering pressure and bias voltage,” Thin Solid Films, vol. 586, pp. 13–21, 2015. View at Publisher · View at Google Scholar · View at Scopus
  4. T. Tsuchiya, T. Nakajima, and K. Shinoda, “Electrical properties of Sb-doped epitaxial SnO2 thin films prepared using excimer-laser-assisted metal-organic deposition,” Applied Physics B, vol. 113, no. 3, pp. 333–338, 2013. View at Publisher · View at Google Scholar · View at Scopus
  5. T. Maruyama and K. Tabata, “Fluorine doped tin dioxide thin films prepared by chemical vapor deposition,” Journal of Applied Physics, vol. 68, no. 8, pp. 4282–4285, 1990. View at Publisher · View at Google Scholar · View at Scopus
  6. M. K. Jayaraj, A. D. Draeseke, J. Tate, and A. W. Sleight, “p-type transparent thin films of CuY1-xCaxO2,” Thin Solid Films, vol. 397, no. 1-2, pp. 244–248, 2001. View at Publisher · View at Google Scholar · View at Scopus
  7. N. Duan, A. W. Sleight, M. K. Jayaraj, and J. Tate, “Transparent p-type conducting CuScO2+x films,” Applied Physics Letters, vol. 77, no. 9, article 1325, 2000. View at Publisher · View at Google Scholar · View at Scopus
  8. R. Nagarajan, A. D. Draeseke, A. W. Sleight, and J. Tate, “p-type conductivity in CuCr1-xMgxO2 films and powders,” Journal of Applied Physics, vol. 89, no. 12, pp. 8022–8025, 2001. View at Publisher · View at Google Scholar · View at Scopus
  9. R. Nagarajan, N. Duan, M. K. Jayaraj et al., “p-Type conductivity in the delafossite structure,” International Journal of Inorganic Materials, vol. 3, no. 3, pp. 265–270, 2001. View at Publisher · View at Google Scholar · View at Scopus
  10. F. Mao, T. Nyberg, T. Thersleff, A. M. Andersson, and U. Jansson, “Combinatorial magnetron sputtering of AgFeO2 thin films with the delafossite structure,” Materials & Design, vol. 91, pp. 132–142, 2016. View at Publisher · View at Google Scholar
  11. Y. Liu, S. Pollaor, and Y. Wu, “Electrohydrodynamic processing of p-Type transparent conducting oxides,” Journal of Nanomaterials, vol. 2015, Article ID 423157, 14 pages, 2015. View at Publisher · View at Google Scholar
  12. A. Janotti and C. G. Van de Walle, “Native point defects in ZnO,” Physical Review B, vol. 76, no. 16, Article ID 165202, 2007. View at Publisher · View at Google Scholar · View at Scopus
  13. S. B. Zhang, S.-H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Physical Review B, vol. 63, no. 7, Article ID 075205, 7 pages, 2001. View at Publisher · View at Google Scholar · View at Scopus
  14. A. Kobayashi, O. F. Sankey, and J. D. Dow, “Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO,” Physical Review B, vol. 28, no. 2, pp. 946–956, 1983. View at Publisher · View at Google Scholar · View at Scopus
  15. B. Ding and J. Yu, Electrospun Nanofibers for Energy and Environmental Applications, Nanostructure Science and Technology, Springer, New York, NY, USA, 2014.
  16. S. S. Pan, C. Ye, X. M. Teng, H. T. Fan, and G. H. Li, “p-type conduction in nitrogen-doped SnO2 films grown by thermal processing of tin nitride films,” Applied Physics A, vol. 85, pp. 21–24, 2006. View at Google Scholar
  17. T. Minami, H. Sonohara, S. Takata, and H. Sato, “Highly transparent and conductive zinc-stannate thin films prepared by RF magnetron sputtering,” Japanese Journal of Applied Physics, vol. 33, pp. L1693–L1696, 1994. View at Google Scholar
  18. R. K. Nath and S. S. Nath, “Tin dioxide thin-film-based ethanol sensor prepared by spray pyrolysis,” Sensors and Materials, vol. 21, no. 2, pp. 95–104, 2009. View at Google Scholar · View at Scopus
  19. E. Çetinörgü, C. Gümüs, S. Goldsmith, and F. Mansur, “Optical and structural characteristics of tin oxide thin films deposited by filtered vacuum arc and spray pyrolysis,” Physica Status Solidi A: Applications and Materials Science, vol. 204, no. 10, pp. 3278–3285, 2007. View at Publisher · View at Google Scholar · View at Scopus
  20. K. Ravichandran and K. Thirumurugan, “Type inversion and certain physical properties of spray pyrolysed SnO2:Al films for novel transparent electronics applications,” Journal of Materials Science and Technology, vol. 30, no. 2, pp. 97–102, 2014. View at Publisher · View at Google Scholar · View at Scopus
  21. K.-Y. Park, G.-W. Kim, Y.-J. Seo et al., “Effect of annealing temperature on properties of p-type conducting Al/SnO2/Al multilayer thin films deposited by sputtering,” Journal of Ceramic Processing Research, vol. 13, no. 2, pp. s385–s389, 2012. View at Google Scholar · View at Scopus
  22. T. Yang, X. Qin, H.-H. Wang et al., “Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films,” Thin Solid Films, vol. 518, no. 19, pp. 5542–5545, 2010. View at Publisher · View at Google Scholar · View at Scopus
  23. Z. Ji, Z. He, Y. Song, K. Liu, and Z. Z. Ye, “Fabrication and characterization of indium-doped p-type SnO2 thin films,” Journal of Crystal Growth, vol. 259, no. 3, pp. 282–285, 2003. View at Publisher · View at Google Scholar · View at Scopus
  24. J. Ni, X. Zhao, X. Zheng, J. Zhao, and B. Liu, “Electrical, structural, photoluminescence and optical properties of p-type conducting, antimony-doped SnO2 thin films,” Acta Materialia, vol. 57, no. 1, pp. 278–285, 2009. View at Publisher · View at Google Scholar · View at Scopus
  25. J. M. Ni, X. J. Zhao, and J. Zhao, “Structural, electrical and optical properties of p-Type transparent conducting SnO2:Zn film,” Journal of Inorganic and Organometallic Polymers and Materials, vol. 22, no. 1, pp. 21–26, 2012. View at Publisher · View at Google Scholar · View at Scopus
  26. Q. Mao, Z. Ji, and L. Zhao, “Mobility enhancement of p-type SnO2 by In–Ga co-doping,” Physica Status Solidi (B), vol. 247, no. 2, pp. 299–302, 2010. View at Publisher · View at Google Scholar · View at Scopus
  27. F. Finanda, Damisih, H. C. Ma, and H. Y. Lee, “Characteristics of p-type gallium tin oxide (GTO) thin films prepared by RF mag-netron sputtering,” Journal of Ceramic Processing Research, vol. 13, no. 2, pp. s181–s185, 2012. View at Google Scholar · View at Scopus
  28. J. Ni, X. Zhao, and J. Zhao, “P-type transparent conducting SnO2:Zn film derived from thermal diffusion of Zn/SnO2/Zn multilayer thin films,” Surface & Coatings Technology, vol. 206, no. 21, pp. 4356–4361, 2012. View at Publisher · View at Google Scholar · View at Scopus
  29. S. S. Pan, G. H. Li, L. B. Wang et al., “Atomic nitrogen doping and p-type conduction in SnO2,” Applied Physics Letters, vol. 95, no. 22, Article ID 222112, 2009. View at Publisher · View at Google Scholar
  30. S. S. Pan, S. Wang, Y. X. Zhang et al., “P-type conduction in nitrogen-doped SnO2 films grown by thermal processing of tin nitride films,” Applied Physics A, vol. 109, no. 2, pp. 267–271, 2012. View at Publisher · View at Google Scholar · View at Scopus
  31. S. S. Lekshmy and K. Joy, “Structural and optoelectronic properties of indium doped SnO2 thin films deposited by sol gel technique,” Journal of Materials Science: Materials in Electronics, vol. 25, no. 4, pp. 1664–1672, 2014. View at Publisher · View at Google Scholar · View at Scopus
  32. C.-Y. Tsay and S.-C. Liang, “Fabrication of p-type conductivity in SnO2 thin films through Ga doping,” Journal of Alloys and Compounds, vol. 622, pp. 644–650, 2015. View at Publisher · View at Google Scholar · View at Scopus
  33. M.-M. Bagheri-Mohagheghi and M. Shokooh-Saremi, “Electrical, optical and structural properties of Li-doped SnO2 transparent conducting films deposited by the spray pyrolysis technique: a carrier-type conversion study,” Semiconductor Science and Technology, vol. 19, no. 6, pp. 764–769, 2004. View at Publisher · View at Google Scholar · View at Scopus
  34. S. Yu, W. Zhang, L. Li, D. Xu, H. Dong, and Y. Jin, “Fabrication of p-type SnO2 films via pulsed laser deposition method by using Sb as dopant,” Applied Surface Science, vol. 286, pp. 417–420, 2013. View at Publisher · View at Google Scholar · View at Scopus
  35. S. W. Lee, Y.-W. Kim, and H. Chen, “Electrical properties of Ta-doped SnO2 thin films prepared by the metal-organic chemical-vapor deposition method,” Applied Physics Letters, vol. 78, no. 3, pp. 350–352, 2001. View at Publisher · View at Google Scholar · View at Scopus
  36. J. Montero, C. Guillén, C. G. Granqvist, J. Herrero, and G. A. Niklasson, “Preferential orientation and surface oxidation control in reactively sputter deposited nanocrystalline SnO2:Sb films: electrochemical and optical results,” ECS Journal of Solid State Science and Technology, vol. 3, no. 11, pp. N151–N153, 2014. View at Publisher · View at Google Scholar · View at Scopus
  37. A. Rabis, D. Kramer, E. Fabbri, M. Worsdale, R. Kötz, and T. J. Schmidt, “Catalyzed SnO2 thin films: theoretical and experimental insights into fabrication and electrocatalytic properties,” Journal of Physical Chemistry C, vol. 118, no. 21, pp. 11292–11302, 2014. View at Publisher · View at Google Scholar · View at Scopus
  38. Y. Porte, R. Maller, H. Faber, H. N. AlShareef, T. D. Anthopoulos, and M. A. McLachlan, “Exploring and controlling intrinsic defect formation in SnO2 thin films,” Journal of Materials Chemistry C, vol. 4, no. 4, pp. 758–765, 2016. View at Publisher · View at Google Scholar
  39. J.-H. Lee, G.-E. Jang, D.-H. Yoon, and S.-H. Son, “Effect of deposition temperature on electro-optical properties of SnO2 thin films fabricated by a PECVD method,” Journal of Ceramic Processing Research, vol. 8, no. 1, pp. 59–63, 2007. View at Google Scholar · View at Scopus
  40. Y. Huang, Z. Ji, and C. Chen, “Preparation and characterization of p-type transparent conducting tin-gallium oxide films,” Applied Surface Science, vol. 253, no. 11, pp. 4819–4822, 2007. View at Publisher · View at Google Scholar · View at Scopus
  41. Ç. Kılıç and A. Zunger, “n-type doping of oxides by hydrogen,” Applied Physics Letters, vol. 81, no. 1, article 73, 2002. View at Publisher · View at Google Scholar
  42. D. O. Scanlon and G. W. Watson, “On the possibility of p-type SnO2,” Journal of Materials Chemistry, vol. 22, no. 48, pp. 25236–25245, 2012. View at Publisher · View at Google Scholar · View at Scopus
  43. J. B. Varley, A. Janotti, A. K. Singh, and C. G. Van De Walle, “Hydrogen interactions with acceptor impurities in SnO2: first-principles calculations,” Physical Review B, vol. 79, no. 24, Article ID 245206, 2009. View at Publisher · View at Google Scholar · View at Scopus
  44. N. M. Johnson, “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon,” Physical Review B, vol. 31, no. 8, pp. 5525–5528, 1985. View at Publisher · View at Google Scholar · View at Scopus
  45. K. Nomura, “Magnetic properties and oxygen defects of dilute metal doped tin oxide based semiconductor,” Croatica Chemica Acta, vol. 88, no. 4, pp. 579–590, 2015. View at Publisher · View at Google Scholar
  46. X. H. Huang, C. B. Tay, Z. Y. Zhan et al., “Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: important role of hydrogen donor,” CrystEngComm, vol. 13, no. 23, pp. 7032–7036, 2011. View at Publisher · View at Google Scholar · View at Scopus
  47. E. Fortunato, R. Barros, P. Barquinha et al., “Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing,” Applied Physics Letters, vol. 97, no. 5, Article ID 052105, 2010. View at Publisher · View at Google Scholar · View at Scopus
  48. D. J. Shuttleworth, “Preparation of metal-polymer dispersions by plasma techniques. An ESCA investigation,” The Journal of Physical Chemistry, vol. 84, no. 12, pp. 1629–1634, 1980. View at Publisher · View at Google Scholar · View at Scopus
  49. A. Chen, K. Zhu, H. Zhong, Q. Shao, and G. Ge, “A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering,” Solar Energy Materials & Solar Cells, vol. 120, pp. 157–162, 2014. View at Publisher · View at Google Scholar · View at Scopus
  50. J. M. Wu, “A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires,” Nanotechnology, vol. 21, no. 23, Article ID 235501, 2010. View at Publisher · View at Google Scholar · View at Scopus