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Journal of Nanomaterials
Volume 2016 (2016), Article ID 7920238, 8 pages
http://dx.doi.org/10.1155/2016/7920238
Research Article

Nanocrystals Growth Control during Laser Annealing of Sn:(α-Si) Composites

1Institute of Physics, National Academy of Sciences of Ukraine, 46 Prospekt Nauky, Kyiv 03028, Ukraine
2Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospekt Nauky, Kyiv 03028, Ukraine
3Faculty of Physics, Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Street, Kyiv 01601, Ukraine

Received 2 February 2016; Revised 25 March 2016; Accepted 10 April 2016

Academic Editor: Valeri Harutyunyan

Copyright © 2016 V. Neimash et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

An efficient technique for low temperature metal-induced nanocrystalline silicon fabrication is presented. The technique is based on laser annealing of thin films of “amorphous silicon-tin” composites combined with in situ control and monitoring with Raman technique. Laser annealing was shown to provide the possibility of fine-tuning the nanocrystals size and concentration, which is important in photovoltaic and thermoelectric devices fabrication.