The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

Figure 1

Side views of the final structure (after annealing process) of the five types of specimens from the direction. (a) Specimen 1: Si/Ge, (b) Specimen 2: Si/(Ge + Cu) with Ge : Cu = 6 : 4, (c) Specimen 3: (Si + Cu)/(Ge + Cu), with 20 at % Cu in both layers, (d) Specimen 4: Si/Cu/Ge/Cu, and (e) Specimen 5: Si/Cu/Ge. Green, red, and yellow particles represent Si, Ge, and Cu atoms, respectively.