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Journal of Nanomaterials
Volume 2016 (2016), Article ID 8163742, 10 pages
http://dx.doi.org/10.1155/2016/8163742
Research Article

Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

1Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada T6G 2V4
2School of Microelectronics and Solid State Electronics, UESTC, Chengdu, Sichuan 610054, China

Received 21 February 2016; Accepted 21 June 2016

Academic Editor: Rakesh Joshi

Copyright © 2016 S. C. Bodepudi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Chemical Vapor Deposition grown multilayer graphene (MLG) exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR) effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (-axis) direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.