TY - JOUR A2 - Kelarakis, Antonios AU - Itohara, Daiki AU - Shinohara, Kazato AU - Yoshida, Toshiyuki AU - Fujita, Yasuhisa PY - 2016 DA - 2016/08/03 TI - p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers SP - 8219326 VL - 2016 AB - Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed. SN - 1687-4110 UR - https://doi.org/10.1155/2016/8219326 DO - 10.1155/2016/8219326 JF - Journal of Nanomaterials PB - Hindawi Publishing Corporation KW - ER -