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Journal of Nanomaterials
Volume 2017, Article ID 1629702, 8 pages
Research Article

Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

1Instituto Politécnico Nacional, Centro de Investigación en Biotecnología Aplicada Unidad Tlaxcala, Carretera a Santa Inés Tecuexcomac, a 1.5 Km, Ex-Hacienda San Juan Molino, Ciudad de México, Mexico
2CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 Sur y Avenida San Claudio, Edif. 137, 72570 Puebla, PUE, Mexico
3Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 Ciudad de México, Mexico

Correspondence should be addressed to F. Severiano; moc.liamtoh@700pancho

Received 11 January 2017; Revised 19 February 2017; Accepted 19 February 2017; Published 23 March 2017

Academic Editor: Shijun Liao

Copyright © 2017 F. Severiano et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report the obtaining of electroluminescent devices (ELD) from porous silicon (PS) and indium doped zinc oxide (ZnO:In) junctions. PS presented photoluminescence (PL) in the visible region of the electromagnetic spectrum. ZnO:In thin film was obtained by dip coating technique. SEM images and IR measurements showed the incorporation of the ZnO:In in the PS structure. Once obtained, the device was optically and electrically characterized. The ELD showed emission in the visible (450–850 nm) and infrared region (900–1200 nm) where it was electrically polarized. The visible emission was detected as luminescent spots on the surface. Electrical characterization was carried out by current-voltage (I-V) curves. The I-V curves showed rectifying behavior. It was related to the quenching of the EL with the process that takes place in the PS when it was immersed in the precursor solution of the ZnO:In.