Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

Table 1

Etching time and thickness of the PSL used in the ELD.

Etching; time (min)	p-type; thickness (µm)	n-type; thickness (µm)
10	4	32
20	13	96
30	23	160