Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Figure 2

Optical image of an array of InGaAs/GaAs rolled-up microstructures obtained after a = 45 s etching. The photolithography pattern consists of rectangular mesas with length ranging from 200 to 800 μm and width of 40 μm, the orientation of the mesas in shown in the image. The arrow indicates a 3D microstructure completely detached from the substrate. Full scale image (460 × 308) μm.