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Journal of Nanomaterials
Volume 2017, Article ID 5970540, 18 pages
https://doi.org/10.1155/2017/5970540
Research Article

Donor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dots

1Instituto de Matemáticas, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
2Universidad EIA, CP 055428, Envigado, Colombia
3Grupo de Física de Materiales, Universidad Pedagógica y Tecnológica de Colombia, Tunja, Colombia
4Division of Theoretical Physics, Dong Thap University, Dong Thap, Vietnam
5Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, 62209 Cuernavaca, MOR, Mexico
6Faculty of Science, Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey
7Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia

Correspondence should be addressed to C. A. Duque; se.oohay@irrevehce_euqudc

Received 6 December 2016; Accepted 6 March 2017; Published 5 April 2017

Academic Editor: Sergio Bietti

Copyright © 2017 M. A. Londoño et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations using two different numerical approaches: a spectral scheme and the finite element method. The resulting energies and wave functions become the basic information needed to evaluate the interstate optical absorption in the system, which is reported as a function of the geometry, the electric field strength, and the temperature.