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Journal of Nanomaterials
Volume 2017 (2017), Article ID 6142927, 6 pages
Research Article

Effects of the Growth Time and the Thickness of the Buffer Layer on the Quality of the Carbon Nanotubes

1School of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, China
2School of Physics and Information Science, Hunan Normal University, Changsha 410081, China

Correspondence should be addressed to J. Chuen

Received 29 June 2017; Accepted 28 September 2017; Published 7 November 2017

Academic Editor: Raffaele Barretta

Copyright © 2017 J. Chuen. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Direct growth of carbon nanotubes (CNTs) array onto silicon substrate by the chemical vapor deposition (CVD) is reported. Experimental results show that the thickness of the buffer layer has a significant effect on the morphology and defects of the array, and when the buffer layer is about 15 nm, the best array on the silicon substrate can be obtained. Moreover, when the growth time is less than the threshold time (70 minutes), the array height will increase with the increase of the time. Importantly, when the growth time is higher than this threshold time, the growth of array will stop, but when the growth is continuing, the amorphous carbon and carbon can cluster, which will affect the structure of the array. These results provide a good material basis for the device, thermal, and conductivity technology.