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Journal of Nanomaterials
Volume 2017, Article ID 8360823, 6 pages
https://doi.org/10.1155/2017/8360823
Research Article

Characterization of Ag-Doped p-Type SnO Thin Films Prepared by DC Magnetron Sputtering

1Department of Solid State Physics, Faculty of Physics, University of Science, Vietnam National University, Ho Chi Minh City (VNU-HCM), 227 Nguyen Van Cu Street, District 5, Ho Chi Minh City, Vietnam
2LED Agri-Bio Fusion Technology Research Center, Chonbuk National University, Jeonju, Republic of Korea

Correspondence should be addressed to Quang Trung Tran; nv.ude.sumch@gnurtqt and Tran Viet Cuong; nv.ude.sumch@gnoucvt

Received 24 August 2017; Revised 4 November 2017; Accepted 19 November 2017; Published 18 December 2017

Academic Editor: Mohamed Bououdina

Copyright © 2017 Hoai Phuong Pham et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Crystalline structure and optoelectrical properties of silver-doped tin monoxide thin films with different dopant concentrations prepared by DC magnetron sputtering are investigated. The X-ray diffraction patterns reveal that the tetragonal SnO phase exhibits preferred orientations along (101) and (110) planes. Our results indicate that replacing Sn2+ in the SnO lattice with Ag+ ions produces smaller-sized crystallites, which may lead to enhanced carrier scattering at grain boundaries. This causes a deterioration in the carrier mobility, even though the carrier concentration improves by two orders of magnitude due to doping. In addition, the Ag-doped SnO thin films show a p-type semiconductor behavior, with a direct optical gap and decreasing transmittance with increasing Ag dopant concentration.