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Journal of Nanomaterials
Volume 2018 (2018), Article ID 1243685, 11 pages
Research Article

Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon

1Institute of Physics, National Academy of Sciences of Ukraine, Nauky Ave. 46, Kyiv 03028, Ukraine
2V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Nauky Ave. 41, Kyiv 03028, Ukraine
3Faculty of Physics, Taras Shevchenko National University of Kyiv, Volodymyrska Str. 64/13, Kyiv 01601, Ukraine

Correspondence should be addressed to V. B. Neimash and A. O. Goushcha

Received 11 November 2017; Revised 7 January 2018; Accepted 22 January 2018; Published 19 February 2018

Academic Editor: Bo Tan

Copyright © 2018 V. B. Neimash et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy in thin-film structures Si-Sn-Si irradiated with pulsed laser light. We have found and analyzed dependencies of the nanocrystals’ size and concentration on the laser pulse intensity for 10 ns and 150 μm duration laser pulses at the wavelengths of 535 nm and 1070 nm. Efficient transformation of the amorphous silicon into a crystalline phase during the 10 ns time interval of the acting laser pulse in the 200 nm thickness films of the amorphous silicon was demonstrated. The results were analyzed theoretically by modeling the spatial and temporal distribution of temperature in the amorphous silicon sample within the laser spot location. Simulations confirmed importance of light absorption depth (irradiation wavelength) in formation and evolution of the temperature profile that affects the crystallization processes in irradiated structures.