Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon

Table 1

Samples’ parameters and protocols of their laser treatment.

Sample number	Layers thickness -- in nm	Laser light wavelength	Laser pulse duration (FWHM)	Range of laser irradiation power in W/cm^2
1	50-100-200	1070 nm	150 μs	(1.4–2.9) × 10^4
2	50-100-200	1070 nm	150 μs	1.3 × 10^5
	50-100-200		10 ns	(5.3–18.0) × 10^7
3	50-100-200	1070 nm	150 μs	(2.9–7.8) × 10^4
4	50-100-200	535 nm	10 ns	(5.5–8.5) × 10^6
5	50-100-200	535 nm	10 ns	(8.5–21.75) × 10^6
6	50-100-200	1070 nm	150 μs	(2.3–6.9) × 10^4
6-1	50-100-200	1070 nm	10 ns	(7.4–15.3) × 10^7
6-2	50-100-200	535 nm	10 ns	(3.5–10.3) × 10^6
7	0-100-200	1070 nm	10 ns	(8.4–52.0) × 10^7
8	0-100-200	1070 nm	10 ns	(2.0–21.8) × 10^7