Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric

<div>(a) A 3D scheme of CNT FET device on high-k dielectric. (b) An optical microscope image of CNT FET device including source-drain electrode and CNT channel region. (c) An AFM image of CNT network. (d) A SEM image of the interface between CNT network and Al electrode.</div>

Journal of Nanomaterials

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Figure 1

Figure 1: Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric 

Journal of Nanomaterials

Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric

Figure 1

Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO₂ Gate Dielectric