Incorporation of Ge on High K Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device
Table 2
Surface treatment performed prior to HfO2 deposition [5].
Sample
Surface preparation
SN1
Ge cleaning + 2 min − 0.3 Torr
SN2
Ge cleaning + 2 min − 17 Torr
SN3
Ge cleaning + 10 min − 17 Torr
SC
Ge cleaning + 1.5 nm Si capping + chemical oxidation