Review Article

Incorporation of Ge on High K Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device

Table 2

Surface treatment performed prior to HfO2 deposition [5].

SampleSurface preparation

SN1Ge cleaning + 2 min − 0.3 Torr
SN2Ge cleaning + 2 min − 17 Torr
SN3Ge cleaning + 10 min − 17 Torr
SCGe cleaning + 1.5 nm Si capping + chemical oxidation
WSPGe cleaning (without surface preparation)