Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

<div>(a) Conductance fluctuations in sample A as a function of magnetic field at various lattice temperatures with fixed<i> I</i> = 20 nA. (b) Conductance fluctuations in sample A as a function of magnetic field at various driving currents for <svg height="12.1436pt" id="M82" style="vertical-align:-3.18148pt" version="1.1" viewbox="-0.0498162 -8.96212 12.8061 12.1436" width="12.8061pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M620 675H597C578 656 570 650 541 650H144C112 650 104 653 94 675H72C59 618 42 552 23 493L53 491C71 534 88 564 105 585C124 608 144 615 238 615H290L197 121C182 40 174 34 88 28L82 0H361L367 28C275 34 266 38 281 121L374 615H441C522 615 543 608 553 583C562 560 566 531 565 493L597 494C603 551 612 629 620 675Z" id="g113-85"></path></g><g transform="matrix(.0091,0,0,-0.0091,7.176,3.132)"><path d="M499 166C484 119 466 88 447 68C424 43 390 38 338 38C297 38 262 40 242 51C223 62 218 80 218 133V522C218 607 226 612 309 617V650H41V617C124 612 131 605 131 522V129C131 45 123 38 38 33V0H497C505 30 529 128 534 160L499 166Z" id="g58-74"></path></g></svg> = 0.32 K.</div>

Journal of Nanomaterials

Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

Figure 3