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Journal of Nanomaterials
Volume 2018, Article ID 6863890, 9 pages
https://doi.org/10.1155/2018/6863890
Research Article

Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

1Shandong Computer Science Center (National Supercomputer Center in Jinan) and Shandong Provincial Key Laboratory of Computer Networks, Qilu University of Technology (Shandong Academy of Sciences), Jinan, Shandong 250101, China
2Shengli No. 1 Middle School, Dongying, Shandong 257027, China
3College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong, Key Laboratory of Molecular and Nano Probes, Ministry of Education, Shandong Provincial Key Laboratory of Clean Production of Fine Chemicals, Shandong Normal University, Shandong 250014, China

Correspondence should be addressed to Yanmei Yang; nc.ude.unds@myy and Meng Guo; gro.sads@gnemoug

Received 16 October 2017; Accepted 11 December 2017; Published 30 January 2018

Academic Editor: Giuseppe Compagnini

Copyright © 2018 Haocheng Sun et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Haocheng Sun, Yuan Shang, Yanmei Yang, and Meng Guo, “Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study,” Journal of Nanomaterials, vol. 2018, Article ID 6863890, 9 pages, 2018. https://doi.org/10.1155/2018/6863890.