High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Figure 1

Chemical structures of (a) gallium acetylacetonate; (b) zinc acetylacetonate; (c) indium acetylacetonate; (d) the structure of bottom-gate top contact IGZO TFT device.

(a)

(b)

(c)

(d)