High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Figure 4

Drain current ( and ) versus gate voltage (Vg) transfer curves of TFTs with IGZO active layers prepared with different process conditions (a) 0.5 hr, 1 hr, 2 hr, and 4 hr annealing at 450°C; (b) 340°C~500°C annealing for 1 hr.

(a)

(b)