Journal of Nanomaterials / 2019 / Article / Fig 1

Research Article

Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate

Figure 1

(a) characteristics of Ni/n-SiC substrate contacts as a function of annealing temperature ( μm). (b) curves of 1050°C-annealed sample as a function of . The inset shows the total resistance plot.

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