Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device
(a) curves of the FTO/PMMA/Ag device. (b) Switching ratio (ON/OFF) versus the applied bias, as estimated from the sweeps recorded for FTO/PMMA/Ag device. (c) Retention performance of the ON and OFF states of the FTO/PMMA/Ag device tested at 0.1 V. (d) Stimulus effect of 0.1 V read pulse under the ON and OFF states of the FTO/PMMA/Ag device.
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