Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing

Figure 2

Schemas of optical models used for analysis of spectroscopic ellipsometry data: (a) for the as-deposited single PECVD Si layer parameter determination and (b) for evaluation of structure properties after annealing process. In order to differentiate the two silicon oxides, the oxide phase in the silicon layer will be referred to as “SiO₂ in PECVD Si,” while continuous oxide layer as “SiO₂ on top”.

(a)

(b)