Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing
Individual layer and phase reaction to annealing in pure argon at (a) 700°C, (b) 800°C, (c) 900°C, and (d) 1000°C of “thick” PECVD Si layer. PECVD Si layer consists of a-Si, c-Si, and SiO2 in PECVD Si phases. SiO2 on top is determined as a separate layer.
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