Journal of Nanomaterials / 2019 / Article / Fig 8

Research Article

Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing

Figure 8

Total oxide thickness (“SiO2 on top”+“SiO2 within PECVD Si”) changes during high-temperature annealing for the two types of samples: with “thin” PECVD Si layer (full lines and open symbols) and for standard RTO (data from [20]) (full symbols).

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