Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing

Figure 8

Total oxide thickness (“SiO₂ on top”+“SiO₂ within PECVD Si”) changes during high-temperature annealing for the two types of samples: with “thin” PECVD Si layer (full lines and open symbols) and for standard RTO (data from [20]) (full symbols).