In Situ Growth of ZnO inside a Porous Silicon Matrix Obtained by Electrochemical Etching with a Hydrofluoric Acid-Formaldehyde Solution

Figure 1

(a) XRD patterns of ZnO/PS. The inset shows the expanded view of the (110), (103), and (200) diffraction peaks corresponding to the ZnO planes. (b) Multi-Gaussian fitting of the XRD patterns between 67° and 72°. The green dotted line corresponds to the experimental data, and the red line is the sum of the two contributions, which consist of the crystalline silicon substrate peak (C-Si) and the PS layer.

(a)

(b)