Research Article
Dislocation Analysis of 3C-SiC Nanoindentation with Different Crystal Plane Groups Based on Molecular Dynamics Simulation
Table 1
Molecular dynamics simulation parameters.
| Parameters | Value |
| Crystal plane group | {100}, {110}, {111} | Sample indentation surface | (001), (110), (111) | Numbers of atoms in specimen | 222338, 223080, 242272 | Dimensions of specimen | | Dimensions of indenter | | Numbers of indenter | 4913 | Equilibration temperature | 900 K | Indenting speed | 50 m/s | Time step | 1 fs |
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