Influence of Process Parameter on Carbon Nanotube Field Effect Transistor Using Response Surface Methodology

Table 2

Design of experiment of CNTFET with outputs.

Thickness (nm)	Voltage (V)	Delay (Ns)	Power (Nw)
32	0.2	1.25	4.789
32	0.4	1.29	4.6
32	0.6	1.34	4.897
22	0.2	1.27	4.9
22	0.4	1.28	4.91
22	0.6	1.97	4.9
10	0.2	1.87	4.91
10	0.4	2.4	4.92
10	0.6	2.15	4.9